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DMC1030UFDB Schematic ( PDF Datasheet ) - Diodes

Teilenummer DMC1030UFDB
Beschreibung COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Hersteller Diodes
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Gesamt 9 Seiten
DMC1030UFDB Datasheet, Funktion
DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
V(BR)DSS
Q1
N-Channel
12V
Q2
P-Channel
-12V
RDS(ON) max
34m@ VGS = 4.5V
40m@ VGS = 2.5V
50m@ VGS = 1.8V
70m@ VGS = 1.5V
59m@ VGS = -4.5V
81m@ VGS = -2.5V
115m@ VGS = -1.8V
215m@ VGS = -1.5V
ID MAX
TA = +25°C
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
ESD PROTECTED
S2
D2
G2
D1
D1
D2
G1
S1
Pin1
Bottom View
Ordering Information (Note 4)
D1 D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Notes:
Part Number
DMC1030UFDB -7
DMC1030UFDB -13
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
D3 YM
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
1 of 9
www.diodes.com
2018
F
Nov Dec
ND
April 2014
© Diodes Incorporated






DMC1030UFDB Datasheet, Funktion
VGS = -1.8V
VGS = -1.5V
VGS = -2.5V
VGS = -4.5V
0.06
VGS = -4.5V
0.05
0.04
0.03
DMC1030UFDB
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
0.0010
2 4 6 8 10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.8
1.6 VGS = -2.5V
1.4 ID = -5.0A
1.2
1
0.8
VGS = -1.8V
ID = -3.0A
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 16 On-Resistance Variation with Temperature
1
0.8
-ID = 1mA
0.6 -ID = 250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 18 Gate Threshold Variation vs. Ambient Temperature
0.02
0
2 4 6 8 10 12 14 16 18
-ID, DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Temperature
20
0.1
0.09
0.08
0.07
VGS = -1.8V
ID = -3.0A
0.06
0.05
0.04
VGS = -2.5V
ID = -5.0A
0.03
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 17 On-Resistance Variation with Temperature
20
18
16
14
12
10
TA= 150°C
8
6 TA= 125°C
4 TA= 85°C
TA= 25°C
2 TA= -55°C
0 0 0.3 0.6 0.9 1.2 1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 19 Diode Forward Voltage vs. Current
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
6 of 9
www.diodes.com
April 2014
© Diodes Incorporated

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