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Teilenummer | 1SS133M |
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Beschreibung | Hermetically Sealed Glass Switching Diodes | |
Hersteller | Taiwan Semiconductor | |
Logo | ||
Gesamt 4 Seiten Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Working Inverse Voltage
WIV 90
Average Rectified Current
IO 150
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
IFM
IFSURGE
450
2
Operating Junction Temperature
TJ + 175
Storage Temperature Range
TSTG
-65 to +200
UNIT
mW
V
mA
mA
A
oC
oC
PARAMETER
SYMBOL
Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR=500nA
IF=100mA
VR=80V
VR=0, f=1.0MHz
BV
VF
IR
Cj
Reverse Recovery Time
(Note 1)
trr
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
MIN
80
--
--
MAX
--
1.2
500
4.0
4.0
UNIT
V
V
nA
pF
ns
Document Number: DS_S1403003
Version: C15
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ 1SS133M Schematic.PDF ] |
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