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1N4935G Schematic ( PDF Datasheet ) - Taiwan Semiconductor

Teilenummer 1N4935G
Beschreibung Glass Passivated Fast Recovery Rectifiers
Hersteller Taiwan Semiconductor
Logo Taiwan Semiconductor Logo 




Gesamt 4 Seiten
1N4935G Datasheet, Funktion
1N4933G thru 1N4937G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Fast Recovery Rectifiers
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
1N 1N 1N 1N 1N
SYMBOL
4933G 4934G 4935G 4936G 4937G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600
35 70 140 280 420
50 100 200 400 600
1.0
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
VF
1.2 V
Maximum reverse current @ rated VR TJ=25
TJ=125
IR
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
RθJA
TJ
TSTG
Note2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
150
200
10
65
- 55 to +150
- 55 to +150
μA
ns
pF
OC/W
OC
OC
Document Number: DS_D1310003
Version: F13





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