KTD1304 Datasheet PDF - KEC
| Part Number | KTD1304 | |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Manufacturers | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES
High Emitter-Base Voltage : VEBO=12V(Min.).
High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).
Low on Resistance : RON=0.6 (Max.) (IB=1mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
25
20
12
300
30
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTD1304
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
MAXType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE1 (FOR)
hFE2 (REV)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
On Resistance
Ron
TEST CONDITION
VCB=25V, IE=0
VEB=12V, IC=0
VCE=2V, IC=4mA
VCE=2V, IC=4mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
f=1KHz, IB=1mA, Vin=0.3V
MIN.
-
-
200
20
-
-
-
-
-
TYP.
-
-
-
-
-
-
60
10
0.6
MAX.
0.1
0.1
800
-
0.25
1
-
-
-
UNIT
A
A
V
V
MHz
pF
2011. 6. 29
Revision No : 3
1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KTD1304 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. = 12V, Silicon NPN Transistor [ Learn More ] | |
| Download | [ KTD1304.PDF Datasheet ] | |
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