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PDF STW40N65M2 Data sheet ( Hoja de datos )

Número de pieza STW40N65M2
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STW40N65M2 Hoja de datos, Descripción, Manual

STW40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW40N65M2
VDS
650 V
RDS(on) max.
0.099 Ω
ID
32 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STW40N65M2
Table 1: Device summary
Marking
Package
40N65M2
TO-247
Packaging
Tube
February 2015
DocID027443 Rev 1
This is information on a product in full production.
1/12
www.st.com

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STW40N65M2 pdf
STW40N65M2
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD (2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 32 A
- 128 A
VGS = 0 V, ISD = 32 A
ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: " Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 468
ns
- 8.7
µC
- 37.5
A
ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: " Test circuit
for inductive load switching and diode
recovery times")
- 610
- 11.7
- 39
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID027443 Rev 1
5/12

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STW40N65M2 arduino
STW40N65M2
Revision history
5 Revision history
Date
09-Feb-2014
Table 10: Document revision history
Revision
Changes
1 First release.
DocID027443 Rev 1
11/12

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