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Teilenummer | STP12N50M2 |
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Beschreibung | N-channel Power MOSFET | |
Hersteller | STMicroelectronics | |
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Gesamt 13 Seiten STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg
Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
72
Features
Order code
STP12N50M2
VDS
500 V
RDS(on) max ID
0.38 Ω 10 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STP12N50M2
.
Table 1. Device summary
Marking
Package
12N50M2
TO-220
Packaging
Tube
June 2014
DocID026516 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
Electrical characteristics
STP12N50M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance
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V
PV
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PV
7F &
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Figure 4. Output characteristics
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Figure 5. Transfer characteristics
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Figure 6. Gate charge vs gate-source voltage
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Figure 7. Static drain-source on-resistance
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6/13 DocID026516 Rev 1
6 Page Revision history
5 Revision history
Date
17-Jun-2014
Table 10. Document revision history
Revision
Changes
1 First release.
STP12N50M2
12/13
DocID026516 Rev 1
12 Page | ||
Seiten | Gesamt 13 Seiten | |
PDF Download | [ STP12N50M2 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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