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Número de pieza | PYX28HC64 | |
Descripción | STATIC CMOS RAM | |
Fabricantes | PYRAMID | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PYX28HC64 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! FEATURES
Access Times of 70, 90, and 120ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 40 mA Active Current
- 200 µA Standby Current
Fast Write Cycle Times
PYX28HC64
8K x 8 EEPROM
Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance: 100,000 Cycles
Data Retention: 100 Years
Available in the following packages:
– 32-Pin Ceramic LCC (450 x 550 mils)
– 28-Pin 600 mil Ceramic DIP
DESCRIPTION
The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating
gate CMOS Technology. The device supports 64-byte
page write operation. The PYX28HC64 features DATA
and Toggle Bit Polling as well as a system software scheme
used to indicate early completion of a Write Cycle. The
device also includes user-optional software data protection.
Endurance is 100,000 Cycles and Data Retention is 100
Years. The device is available in a 32-Pin LCC package
as well as a 28-Pin 600 mil wide Ceramic DIP.
Pin ConfigurationS
Functional Block Diagram
DIP (C5-1)
Document # EEPROM107 REV OR
LCC (L6)
Revised August 2011
1 page TIMING WAVEFORM OF BYTE WRITE Cycle (cE Controlled)
PYX28HC64 - 8K x 8 EEPROM
TIMING WAVEFORM OF BYTE WRITE Cycle (wE Controlled)
Document # EEPROM107 REV OR
Page 5
5 Page REVISIONS
DOCUMENT NUMBER EEPROM107
DOCUMENT TITLE
PYX28HC64 - 8K x 8 EEPROM
REV ISSUE DATE ORIGINATOR DESCRIPTION OF CHANGE
OR Aug 2011
JDB New Data Sheet
PYX28HC64 - 8K x 8 EEPROM
Document # EEPROM107 REV OR
Page 11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet PYX28HC64.PDF ] |
Número de pieza | Descripción | Fabricantes |
PYX28HC64 | STATIC CMOS RAM | PYRAMID |
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