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PDF PYA28C64B Data sheet ( Hoja de datos )
| Número de pieza | PYA28C64B | |
| Descripción | STATIC CMOS RAM | |
| Fabricantes | PYRAMID | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PYA28C64B (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 40 mA Active Current
- 100 µA Standby Current
Fast Write Cycle Times
PYA28C64B
8K x 8 EEPROM
Software Data Protection
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 100,000 Write Cycles
Data Retention: 10 Years
Available in the following packages:
– 28-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C64B is a 5 Volt 8Kx8 EEPROM. The device
supports 64-byte page write operation. The PYA28C64B
features DATA and Toggle Bit Polling to indicate early
completion of a Write Cycle. The device also includes
user-optional software data protection. Data Retention is
10 Years. The device is available in a 28-Pin 600 mil wide
Ceramic DIP and 32-Pin LCC.
Functional Block Diagram
Pin Configuration
Document # EEPROM111 REV 02
DIP (C5-1)
LCC (L6)
Modified April 2015
1 page  
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
tWHWL1
tEHEL1
tAVEL
tAVWL
tELAX
tWLAX
tWLEL
tELWL
tWHEH
tOHEL
tOHWL
tWHOL
tELEH
tWLWH
tDVEH
tDVWH
tEHDX
tWHDX
tEHEL2
tWHWL2
tELWL
Parameter
Write Cycle Time
Address Setup Time
Address Hold Time
Write Setup Time
Write Hold Time
OE Setup Time
OE Hold Time
WE Pulse Width
Data Setup Time
Data Hold Time
Byte Load Cycle Time
CE Setup Time
150 / 200 / 250 / 350
Min Max
10
0
50
0
0
10
10
100
50
0
0.2 150
1
tOVHWL
Output Setup Time
1
tEHWH
CE Hold Time
1
tWHOH
OE Hold Time
1
PYA28C64B - 8K x 8 EEPROM
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
Document # EEPROM111 REV 02
Page 5
5 Page 
PYA28C64B - 8K x 8 EEPROM
REVISIONS
DOCUMENT NUMBER EEPROM111
DOCUMENT TITLE
PYA28C64B - 8K x 8 EEPROM
REV
OR
01
02
ISSUE DATE
Jun 2013
Oct 2014
Apr 2015
ORIGINATOR DESCRIPTION OF CHANGE
JDB New Data Sheet
JDB Replaced MIL-STD-883 Class B process flow with Test Method 5004
JDB Corrected Block Diagram
Document # EEPROM111 REV 02
Page 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PYA28C64B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PYA28C64 | EEPROM | PYRAMID |
| PYA28C64B | STATIC CMOS RAM | PYRAMID |
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