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PDF HRLP33N03K Data sheet ( Hoja de datos )
| Número de pieza | HRLP33N03K | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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HRLP33N03K
30V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 110 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.7 mΩ (Typ.) @VGS=10V
Lower RDS(ON) : 3.2 mΩ (Typ.) @VGS=4.5V
100% Avalanche Tested
Jan 2015
BVDSS = 30 V
RDS(on) typ = 2.7 mΩ
ID = 150 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃)
- Derate above 25℃
30
150
105
525
±16
1200
11.5
115
0.77
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.3
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,Jan 2015
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A0,Jan 2015
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HRLP33N03K.PDF ] | |
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