KDV350E Datasheet PDF - KEC
| Part Number | KDV350E | |
| Description | SILICON EPITAXIAL PLANAR DIODE | |
| Manufacturers | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES
Low Series Resistance : rS=0.50 (Max.)
Small Package. (ESC Package)
KDV350E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CE
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
VR
IR
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=15V
VR=1V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
VR=1V, f=470MHz
MIN.
15
-
15.0
5.3
2.8
-
TYP.
-
-
-
-
-
-
MAX.
-
10
17.5
6.3
-
0.5
UNIT
V
nA
pF
Marking
Type Name
UK
2014. 3. 31
Revision No : 1
1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KDV350E electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ KDV350E.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
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| KDV350E | The function is SILICON EPITAXIAL PLANAR DIODE. KEC | |
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