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PDF PG05GBUSV Data sheet ( Hoja de datos )
| Número de pieza | PG05GBUSV | |
| Descripción | TVS Diode | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PG05GBUSV (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
200 Watts peak pulse power (tp=8/20 s)
Transient protection for high-speed data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 24A(tp=8/20 s)
Protects four I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in protable electronics.
APPLICATIONS
Cellular Phone Handsets and Accessories.
Cordless Phones.
Personal Digital Assistants (PDA’s)
Notebooks, desktops PC, & servers.
Portable Instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
PG05GBUSV
TVS Diode Array for ESD
Protection in Portable Electronics
B
B1
1 5 DIM MILLIMETERS
A 2.00+_ 0.20
2 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. (TVS) D1
2. COMMON ANODE
3. (TVS) D2
4. (TVS) D3
5. (TVS) D4
USV
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
PPK
IPP
Tj
Tstg
RATING
200
24
-55 150
-55 150
UNIT
W
A
Marking
5
4
Type Name
5G
123
54
D4 D3
D1 D2
1 23
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Clamping Voltage
VC
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=5V
IPP=1A, tp=8/20 s
IPP=24A, tp=8/20 s
VR=0V, f=1MHz
Between I/O Pins and GND
2008. 9. 10
Revision No : 3
MIN.
-
6
-
-
-
TYP.
-
-
-
-
-
MAX.
5
-
10
9.5
12.5
UNIT
V
V
A
V
-
150 175
pF
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PG05GBUSV.PDF ] | |
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