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PDF PG03FSESC Data sheet ( Hoja de datos )
| Número de pieza | PG03FSESC | |
| Descripción | TVS Diode | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PG03FSESC (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD
protection applications.
(* Multi-Layer Varistors [0402 Size])
Protects on I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
PPK
IPP
Tj
Tstg
RATING
50
5
-55 150
-55 150
UNIT
W
A
PG03FSESC
Single Line TVS Diode for ESD
Protection in Portable Electronics
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
CATHODE MARK
21
3S
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRWM
VBR
IR
VC
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=3.3V
IPP=5A, tp=8/20 s
VR=0V, f=1MHz
MIN.
-
4.0
-
-
-
TYP.
-
-
-
-
-
MAX.
3.3
-
20
10.9
100
UNIT
V
V
A
V
pF
2006. 11. 6
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PG03FSESC.PDF ] | |
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