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Teilenummer | WNM4001 |
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Beschreibung | Small Signal N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 6 Seiten WNM4001
Small Signal N-Channel, 20V, 0.5A, MOSFET
V(BR)DSS
20 V
RDS(on) Max.
0.7ȍ@ 4.5V
0.85ȍ@ 2.5V
1.25ȍ@ 1.8V
ID MAX
0.5A
0.3A
0.1A
Descriptions
The WNM4001 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4001 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4001
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4001-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.3
Package Outline Dimension
SOT-523
WNM4001
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
ș
Will Semiconductor Ltd.
Dimension in Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 Typ.
0.900
1.100
0.400 Ref.
0.260
0o
0.460
8o
6
Nov, 2011 - Rev. 1.3
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNM4001 Schematic.PDF ] |
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