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Teilenummer | RQ5E030AJ |
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Beschreibung | Nch 30V 3A Middle Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 12 Seiten RQ5E030AJ
Nch 30V 3A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
75mΩ
±3.0A
1W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
(SC-96)
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCL
HW
Symbol
VDSS
ID*1
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
Tstg
Value
30
±3.0
±6.0
±12
0.69
3.0
1
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150227 - Rev.002
RQ5E030AJ
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Transconductance vs. Drain Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150227 - Rev.002
6 Page 12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ RQ5E030AJ Schematic.PDF ] |
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