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Teilenummer | RQ3E130BN |
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Beschreibung | Nch 30V 13A Middle Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 12 Seiten RQ3E130BN
Nch 30V 13A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
6.0mΩ
±13A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E130BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±13
±52
±20
2
150
-55 to +150
V
A
A
V
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141125 - Rev.001
RQ3E130BN
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Tranceconductance vs. Drain
Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
6/11
20141125 - Rev.001
6 Page 12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ RQ3E130BN Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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