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RQ3E100BN Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RQ3E100BN
Beschreibung Nch 30V 10A Middle Power MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 12 Seiten
RQ3E100BN Datasheet, Funktion
RQ3E100BN
  Nch 30V 10A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
10.4mΩ
±10A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E100BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±10
±40
±20
2
150
-55 to +150
V
A
A
V
W
                                              
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141001 - Rev.001    






RQ3E100BN Datasheet, Funktion
RQ3E100BN
      
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
        
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
 Temperature
Fig.10 Tranceconductance  vs. Drain
Current
                                                                                          
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
6/11
20141001 - Rev.001

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