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PDF STH320N4F6-6 Data sheet ( Hoja de datos )
| Número de pieza | STH320N4F6-6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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Features
STH320N4F6-2,
STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6
STripFET™ VI DeepGATE™ Power MOSFET
Datasheet — production data
Order codes
STH320N4F6-2
STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
■ Standard threshold drive
■ 100% avalanche tested
ID(1)
200 A
Applications
■ Automotive switching applications
TAB
TAB
2
3
1
H2PAK-2
1
H2PAK-6
7
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary
Order codes
STH320N4F6-2
STH320N4F6-6
Marking
320N4F6
S(2, 3)
H2PAK-2
Package
H2PAK-2
H2PAK-6
S(2, 3, 4, 5, 6, 7)
H2PAK-6
SC06140_H2PAK-2-6
Packaging
Tape and reel
February 2013
This is information on a product in full production.
Doc ID 024221 Rev 1
1/19
www.st.com
19
1 page  
STH320N4F6-2, STH320N4F6-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISD (1)
Source-drain current
Source-drain current (pulsed)
200 A
-
800 A
VSD (2) Forward on voltage
ISD = 80 A, VGS = 0
- 1.1 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 160 A,di/dt = 100 A/µs
58.7
VDD = 32 V, Tj = 25 °C
- 99.2
(see Figure 15)
3.38
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 024221 Rev 1
5/19
5 Page 
STH320N4F6-2, STH320N4F6-6
Figure 19. H²PAK-2 drawing
Package mechanical data
Doc ID 024221 Rev 1
8158917591721_2C_C
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STH320N4F6-6.PDF ] | |
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