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M93C76-DRE Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer M93C76-DRE
Beschreibung MICROWIRE serial EEPROM
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 30 Seiten
M93C76-DRE Datasheet, Funktion
M93Cx6-DRE
16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide)
MICROWIRE™ serial EEPROM 105 °C Operation
Datasheet - production data
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
WFDFPN8 (MF)
2 x 3 mm
Features
Industry standard MICROWIRE™ bus
Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb
Dual organization: by word (x16) or byte (x8)
Write
– Byte within 4 ms
– Word within 4 ms
READY/BUSY signal during programming
2 MHz clock rate
Sequential read operation
Single supply voltage: 1.8 V to 5.5 V
Extended temperature range: -40 °C up to 105
°C
Enhanced ESD protection
Write cycle endurance
– 4 million Write cycles at 25 °C
– 1.2 million Write cycles at 85 °C
– 900 k Write cycle at 105°C
Data retention
– more than 50 years at 105 °C
– 200 years at 55 °C
Packages
– RoHS-compliant and Halogen-free
(ECOPACK2®)
Table 1. Device summary
Reference
Part number
M93Cx6-DRE
M93C46-DRE
M93C56-DRE
M93C66-DRE
M93C76-DRE
M93C86-DRE
November 2015
This is information on a product in full production.
DocID028496 Rev 1
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M93C76-DRE Datasheet, Funktion
Description
1 Description
M93Cx6-DRE
The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86
(16 Kbit) are Electrically Erasable PROgrammable Memory (EEPROM) devices accessed
through the MICROWIRE™ bus protocol. The memory array can be configured either in
bytes (x8b) or in words (x16b).
The M93Cx6-DRE devices operate within a voltage supply range from 1.8 V to 5.5 V
The M93Cx6-DRE devices are guaranteed over the -40 °C/+105 °C temperature range and
are compliant with the level of reliability defined by the AEC-Q100 grade 2.
Device
M93C86
M93C76
M93C66
M93C56
M93C46
Table 2. Memory size versus organization
Number of bits
Number of 8-bit bytes
Number of 16-bit words
16384
2048
1024
8192
1024
512
4096
2048
512
256
256
128
1024
128
64
Figure 1. Logic diagram
6##
$
#
3
/2'
-#X
1
Signal name
S
D
Q
C
ORG
VCC
VSS
633
Table 3. Signal names
Function
Chip Select
Serial Data input
Serial Data output
Serial Clock
Organization Select
Supply voltage
Ground
!)
Direction
Input
Input
Output
Input
Input
-
-
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M93C76-DRE pdf, datenblatt
Instructions
M93Cx6-DRE
Table 6. Instruction set for the M93C56 and M93C66
Instruction
Description
x8 origination (ORG = 0) x16 origination (ORG = 1)
Start Op-
bit code Address
(1) (2)
Data
Required
clock
Address
(1) (3)
cycles
Data
Required
clock
cycles
READ
Read Data from Memory 1
10
A8-A0
Q7-
Q0
-
A7-A0
Q15-
Q0
-
WRITE
Write Data to Memory
1
01
A8-A0
D7-
D0
20
A7-A0 D15-D0 27
WEN
Write Enable
1
00
1 1XXX
XXXX
-
12
11XX
XXXX
-
11
WDS
Write Disable
1
00
0 0XXX
XXXX
-
12
00XX
XXXX
-
11
ERASE Erase Byte or Word
1 11 A8-A0 -
12 A7-A0 -
11
ERAL
Erase All Memory
1
00
1 0XXX
XXXX
-
12
10XX
XXXX
-
11
WRAL
Write All Memory with
same Data
1
00
0 1XXX
XXXX
D7-
D0
20
01XX
XXXX
D15-D0
27
1. X = Don't Care bit.
2. Address bit A8 is not decoded by the M93C56.
3. Address bit A7 is not decoded by the M93C56.
Table 7. Instruction set for the M93C76 and M93C86
Instruction
Description
Start Op-
bit code
x8 Origination (ORG = 0)
x16 Origination (ORG = 1)
Address
(1)(2)
Data
Required
clock
Address
(1) (3)
cycles
Data
Required
clock
cycles
READ
WRITE
WEN
WDS
ERASE
ERAL
WRAL
Read Data from
Memory
Write Data to
Memory
Write Enable
1
1
1
Write Disable
1
Erase Byte or Word 1
Erase All Memory 1
Write All Memory
with same Data
1
10 A10-A0 Q7-Q0
01 A10-A0 D7-D0
00
11X XXXX
XXXX
-
00
00X XXXX
XXXX
-
11 A10-A0
-
00
10X XXXX
XXXX
-
00
01X XXXX
XXXX
D7-D0
- A9-A0 Q15-Q0
22 A9-A0 D15-D0
14
11 XXXX
XXXX
-
14
00 XXXX
XXXX
-
14 A9-A0 -
14
10 XXXX
XXXX
-
22
01 XXXX
XXXX
D15-D0
-
29
13
13
13
13
29
1. X = Don't Care bit.
2. Address bit A10 is not decoded by the M93C76.
3. Address bit A9 is not decoded by the M93C76.
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