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STP12N60M2 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer STP12N60M2
Beschreibung N-channel Power MOSFET
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 13 Seiten
STP12N60M2 Datasheet, Funktion
STP12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP12N60M2 600 V 0.450 Ω 9 A 85 W
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STP12N60M2
Table 1: Device summary
Marking
Package
12N60M2
TO-220
Packing
Tube
May 2015
DocID027902 Rev 1
This is information on a product in full production.
1/13
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STP12N60M2 Datasheet, Funktion
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STP12N60M2
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID027902 Rev 1

6 Page









STP12N60M2 pdf, datenblatt
Revision history
STP12N60M2
5 Revision history
Date
22-May-2015
Table 10: Document revision history
Revision
Changes
1 First release.
12/13
DocID027902 Rev 1

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