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Teilenummer | P2003BVG |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 8 Seiten P2003BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
9A
SOP-8
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
9
7
32
Avalanche Current
IAS 18.5
Avalanche Energy
L =0.1mH
EAS
17
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
50 °C / W
REV 1.1
1 2015/11/11
P2003BVG
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.1
6 2015/11/11
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P2003BVG Schematic.PDF ] |
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