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PDF STL80N75F6 Data sheet ( Hoja de datos )
| Número de pieza | STL80N75F6 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL80N75F6
N-channel 75 V, 4.5 mΩ typ., 18 A STripFET™ DeepGATE™ VI
Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL80N75F6
VDS
75 V
RDS(on) max
5.5 mΩ
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
ID
18 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL80N75F6
Table 1. Device summary
Marking
Package
80N75F6
PowerFLAT™ 5x6
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID018785 Rev 3
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www.st.com
15
1 page  
STL80N75F6
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD
(1)
ISDM
(2)
VSD
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, VGS = 0
ISD = 18 A,
di/dt = 100 A/μs,
VDD= 60 V, TJ = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 μs, duty cycle 1.5%
-
-
-
-
-
-
18 A
72 A
1.5 V
48 ns
96 nC
4A
DocID018785 Rev 3
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5 Page 
STL80N75F6
Package mechanical data
Dim.
A
A1
A2
b
D
E
D2
E2
e
e1
L
K
Table 9. PowerFLAT™ 5x6 type S-C mechanical data
mm
Min. Typ. Max.
0.80 1.00
0.02 0.05
0.25
0.30 0.50
5.20
6.15
4.11 4.31
3.50 3.70
1.27
0.65
0.715
1.015
1.05 1.35
Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)
DocID018785 Rev 3
Footprint
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STL80N75F6.PDF ] | |
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