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Teilenummer | NX3020NAK |
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Beschreibung | single N-channel Trench MOSFET | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 15 Seiten NX3020NAK
30 V, single N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 200 mA
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
NX3020NAK
30 V, single N-channel Trench MOSFET
Symbol
IGSS
Parameter
gate leakage current
RDSon
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS gate-source charge
QGD gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 150 °C
VGS = 4.5 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VDS = 10 V; ID = 150 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 115 mA; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
- - 3.5 µA
- - -3.5 µA
- - 1 µA
- - -1 µA
- - 0.5 µA
- - -0.5 µA
- 2.7 4.5 Ω
- 5.5 9.2 Ω
- 3 5.2 Ω
- 4 13 Ω
320 - - mS
- 0.34 0.44 nC
- 0.11 - nC
- 0.06 - nC
- 13 20 pF
- 2.6 - pF
- 1.1 - pF
- 5 10 ns
- 5 - ns
- 34 68 ns
- 17 - ns
0.47 0.7 1.2 V
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
6 / 15
6 Page NXP Semiconductors
NX3020NAK
30 V, single N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
NX3020NAK v.2
20131029
Product data sheet
Modifications:
• 3D package outline added
Change notice
-
• Table 7 values of capacitance parameters corrected
NX3020NAK v.1
• Figure 13 corrected
20121002
Product data sheet
-
Supersedes
NX3020NAK v.1
-
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
12 / 15
12 Page | ||
Seiten | Gesamt 15 Seiten | |
PDF Download | [ NX3020NAK Schematic.PDF ] |
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