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HY1001P Schematic ( PDF Datasheet ) - HOOYI

Teilenummer HY1001P
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller HOOYI
Logo HOOYI Logo 




Gesamt 10 Seiten
HY1001P Datasheet, Funktion
HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
70V/75A,
RDS(ON)=7.8m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management for Inverter Systems.
S
D
G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY1001P Datasheet, Funktion
HY1001M/P
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.4
V = 10V
2.2 GS
I = 40A
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
R @T =25oC:
ON j
7.8m
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
170
100
T =175oC
10 j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Capacitance
5500
5000
Frequency=1MHz
4500
4000
3500
3000
Ciss
2500
2000
1500
1000
500
Crss
Coss
0
0 5 10 15 20 25 30 35 40
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 30V
9
DS
I = 40A
DS
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge (nC)
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