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PDF SQ4005EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4005EY | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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Work-In-Progress
SQ4005EY
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -4.5 V
RDS(on) (Ω) at VGS = -2.5 V
ID (A)
Configuration
Package
SO-8 Single
D
D5
D6
D7
8
-12
0.016
0.022
-15
Single
SO-8
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
Marking Code: Q4005
4
3G
2S
1S
S
Top View
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-12
±8
-15
-8.7
-5.4
-60
-20
20
6
2
-55 to +175
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
92
25
UNIT
V
A
mJ
W
°C
UNIT
°C/W
SPending-Rev. A, 12-Oct-15
1
Document Number: 64454
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
Work-In-Progress
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
1
Duty Cycle = 0.5
10 IDM Limited
1
Limited by RDS(on)*
100 µs
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
SQ4005EY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 84 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
SPending-Rev. A, 12-Oct-15
5
Document Number: 64454
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQ4005EY.PDF ] | |
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