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PDF SQ3481EV Data sheet ( Hoja de datos )

Número de pieza SQ3481EV
Descripción Automotive P-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! SQ3481EV Hoja de datos, Descripción, Manual

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SQ3481EV
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
TSOP-6
Top V iew
- 30
0.043
0.070
- 7.5
Single
(4) S
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
3 mm
16
25
(3) G
34
2.85 mm
Marking Code: 8Exxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
SQ3481EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 30
± 20
- 7.5
- 4.3
- 5.2
- 30
- 15
11
4
1.3
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
110
36
UNIT
°C/W
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




SQ3481EV pdf
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
2
1
Duty Cycle = 0.5
10
Limited by RDS(on)*
100 μs
1 ms
1
10 ms
100 ms
0.1 1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ3481EV
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
S11-2124-Rev. B, 07-Nov-11
5
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5 Page





SQ3481EV arduino
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
Return to Index
Return to Index
0.039
(1.001)
0.020
(0.508)
0.019
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
26
Document Number: 72610
Revision: 21-Jan-08

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