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PDF SQ1912AEEH Data sheet ( Hoja de datos )
| Número de pieza | SQ1912AEEH | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SQ1912AEEH
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 4.5 V
RDS(on) (Ω) at VGS = 2.5 V
RDS(on) (Ω) at VGS = 1.8 V
ID (A)
Configuration
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
20
0.280
0.360
0.450
0.8
Dual
Marking Code: 8R
1
S1
Top View
2
G1
3
D2
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg tested
• Typical ESD protection: 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
3k
G1
3k
G2
S1 S2
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1912AEEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
20
± 12
0.8
0.8
0.8
3
1.5
0.5
-55 to +175
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
220
100
UNIT
°C/W
S15-1251 Rev. A, 01-Jun-15
1
Document Number: 62983
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
ID = 1 mA
28
26
24
22
20
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
IDM Limited
10
Limited by RDS(on)*
1 10 ms
100 ms
0.1 1 s, 10 s, DC
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
SQ1912AEEH
Vishay Siliconix
S15-1251 Rev. A, 01-Jun-15
5
Document Number: 62983
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
AN816
Vishay Siliconix
500
400
300
Alloy 42
200
Copper
100
0
10-5 10-4 10-3 10-2 10-1 1 10 100 1000
Time (Secs)
FIGURE 4. Dual SC70-6 Thermal Performance on EVB
500
400
300
Alloy
42
200
100
Copper
0
10-5 10-4 10-3 10-2 10-1 1 10 100 1000
Time (Secs)
FIGURE 5. Dual SC70-6 Comparison on 1-inch2 PCB
Document Number: 71405
12-Dec-03
www.vishay.com
3
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SQ1912AEEH.PDF ] | |
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