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3PN0402 Schematic ( PDF Datasheet ) - Infineon

Teilenummer 3PN0402
Beschreibung Power-Transistor
Hersteller Infineon
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Gesamt 9 Seiten
3PN0402 Datasheet, Funktion
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
2.0 m
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N04S3-02
IPI120N04S3-02
IPP120N04S3-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3PN0402
3PN0402
3PN0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
120
480
1880
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-04-30






3PN0402 Datasheet, Funktion
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
3.5
3
2300 µA
104
Ciss
2.5 230 µA
Coss
2 103
Crss
1.5
1
-60 -20 20 60 100 140 180
T j [°C]
102
0
5 10 15 20 25 30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I A S= f(t AV)
parameter: Tj(start)
1000
102
175 °C 25 °C
101
100
10
150°C
100°C
25°C
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1
1
Rev. 1.0
page 6
10 100
t AV [µs]
1000
2007-04-30

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