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What is IGU04N60T?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IGU04N60T Datasheet PDF - Infineon

Part Number IGU04N60T
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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IGU04N60T
TRENCHSTOPSeries
q
Low Loss IGBT : IGBT in TRENCHSTOPtechnology
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- frequency inverters
- drives
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGU04N60T
VCE
600 V
IC VCE(sat),Tj=25°C Tj,max
4A
1.5 V
175 C
Marking
G04T60
G
E
PG-TO251-3
Package
PG-TO251-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175C)
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering, 1.6mm (0.063 in.) from case for 10s.
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Ts
Value
600
9.5
6.5
12
12
20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.1 17.02.2016

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IGU04N60T equivalent
IGU04N60T
TRENCHSTOPSeries
q
10A
V =20V
8A GE
15V
13V
6A
11V
9V
4A 7V
2A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
10A
V =20V
8A GE
15V
13V
6A
11V
9V
4A 7V
2A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
8A
6A
4A
2A TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
I =8A
C
1.5V
1.0V
IC=4A
I =2A
C
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.1 17.02.2016


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Featured Datasheets

Part NumberDescriptionMFRS
IGU04N60TThe function is IGBT ( Insulated Gate Bipolar Transistor ). InfineonInfineon

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