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PDF FDD1600N10ALZ Data sheet ( Hoja de datos )
| Número de pieza | FDD1600N10ALZ | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDD1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 6.8 A, 160 m
January 2014
Features
• RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A
• Low Gate Charge (Typ.2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD1600N10ALZ
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
-55 to +150
300
FDD1600N10ALZ
8.4
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD1600N10ALZ Rev. C3
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
20
10
0.5
0.2
1 0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 8.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
100
101
tt11,, RReeccttaanngguulalar rPuPluselsDeuDrautrioantio[snec[s] ec]
100 1000
©2012 Fairchild Semiconductor Corporation
FDD1600N10ALZ Rev. C3
5
www.fairchildsemi.com
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