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PDF MTB110P08KN3 Data sheet ( Hoja de datos )
| Número de pieza | MTB110P08KN3 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB110P08KN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1A
-80V
-2.2A
104mΩ(typ)
141mΩ(typ)
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• ESD protected gate
• Pb-free lead plating package
Symbol
MTB110P08KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
GS
Ordering Information
Device
MTB110P08KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB110P08KN3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
100 C oss
f=1MHz
Crss
10
0
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=-16V
8
VDS=-40V
6
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
4 VDS=-64V
2
ID=-2A
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
100μs
1 1ms
0.1 TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=90°C/W,
single pulse
DC
10ms
100ms
1s
0.01
0.1 1
10 100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
2.5
2
1.5
1
0.5 VGS=-10V, Tj(max)=150°C,
RθJA=90°C/W, single pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB110P08KN3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB110P08KN3.PDF ] | |
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