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Teilenummer | MTB020N03KQ8 |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB020N03KQ8
Spec. No. : C143Q8
Issued Date : 2015.11.13
Revised Date :
Page No. : 1/9
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
• ESD protected gate
BVDSS
ID
RDS(ON)@VGS=10V, ID=9A
RDS(ON)@VGS=4.5V, ID=7A
30V
10.2A
12.8 mΩ(typ)
17.4 mΩ(typ)
Symbol
MTB020N03KQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device
MTB020N03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C143Q8
Issued Date : 2015.11.13
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
40
35
30
25
20
15
10
5
0
0
Typical Transfer Characteristics
VDS=10V
1 23 4
VGS, Gate-Source Voltage(V)
5
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40 TJ(MAX)=150°C
TA=25°C
θJA=40°C/W
30
20
10
0
0.01
0.1
1 10
Pulse Width(s)
100 1000
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB020N03KQ8
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB020N03KQ8 Schematic.PDF ] |
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MTB020N03KQ8 | N-Channel Enhancement Mode MOSFET | Cystech Electonics |
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