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Número de pieza | MTB015N10QQ8 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB015N10QQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB015N10QQ8
Spec. No. : C141Q8
Issued Date : 2015.10.13
Revised Date :
Page No. : 1/9
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
ID @ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
10A
12.2A
12.6 mΩ(typ)
17.4mΩ(typ)
Symbol
MTB015N10QQ8
Outline
Pin 1
SOP-8
G:Gate
D:Drain
S:Source
Ordering Information
Device
MTB015N10QQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB015N10QQ8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C141Q8
Issued Date : 2015.10.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1.0
C oss 0.8
ID=1mA
f=1MHz
Crss
100
0.1 1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8 VDS=50V
VDS=20V
6
4
VDS=80V
2
ID=10A
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
12
10
8
6
4
2 TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB015N10QQ8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB015N10QQ8.PDF ] |
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