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PDF MTB015N10QH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB015N10QH8 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB015N10QH8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C141H8
Issued Date : 2015.10.13
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB015N10QH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=15A
RDSON(typ)@VGS=4.5V, ID=10A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
100 V
39 A
8.8A
12 mΩ
16 mΩ
Symbol
MTB015N10QH8
Outline
Pin 1
DFN5×6
G：Gate
D：Drain
S：Source
Ordering Information
Device
Package
Shipping
MTB015N10QH8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB015N10QH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C141H8
Issued Date : 2015.10.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
C oss 0.8
ID=1mA
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100 RDS(ON)
Limit
100μs
10
1
0.1
0.01
TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
1ms
10ms
100ms
1s
DC
0.1 1
10 100
VDS, Drain-Source Voltage(V)
1000
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8
VDS=50V
6
4 VDS=80V
2
ID=15A
0
0 6 12 18 24 30 36 42 48 54 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
45
40
35
30
25
20
15
10
5 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB015N10QH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB015N10QH8.PDF ] | |
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