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Número de pieza | CED740A | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CED740A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CED740A/CEU740A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
400V, 9A, RDS(ON) = 0.55Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 400
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
9
6.3
Drain Current-Pulsed a
IDM 36
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
107
0.7
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
203
9
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Feb
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CED740A.PDF ] |
Número de pieza | Descripción | Fabricantes |
CED740A | N-Channel Enhancement Mode Field Effect Transistor | CET |
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