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IGC50T120T6RL Schematic ( PDF Datasheet ) - Infineon

Teilenummer IGC50T120T6RL
Beschreibung IGBT4 Low Power Chip
Hersteller Infineon
Logo Infineon Logo 




Gesamt 5 Seiten
IGC50T120T6RL Datasheet, Funktion
IGC50T120T6RL
IGBT4 Low Power Chip
FEATURES:
1200V Trench + Field Stop technology
low switching losses
positive temperature coefficient
easy paralleling
This chip is used for:
low / medium power modules
Applications:
low / medium power drives
C
G
E
Chip Type
VCE ICn
IGC50T120T6RL 1200V 50A
Die Size
7.25 x 6.84 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.25 x 6.84
5.74 x 5.367
0.811 x 1.31
mm 2
49.6 / 34.5
115 µm
150 mm
90 grd
285
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7663C, Edition 1, 31.10.2007





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