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IGC168T170S8RH Schematic ( PDF Datasheet ) - Infineon

Teilenummer IGC168T170S8RH
Beschreibung IGBT3 Power Chip
Hersteller Infineon
Logo Infineon Logo 




Gesamt 5 Seiten
IGC168T170S8RH Datasheet, Funktion
IGC168T170S8RH
IGBT3 Power Chip
Features:
1700V Trench + Field stop technology
low switching losses and saturation losses
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
power modules
Applications:
drives
Chip Type
VCE
IC
Die Size
IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
13.38 x 12.58
11.159 x 10.353
1.674 x 0.899
mm2
168.3
190 µm
200 mm
142
Photoimide
3200 nm AlSiCu
Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793N, L7793U, L7793F, Rev 0.9, 27.06.2014





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