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PDF IGC136T170S8RH2 Data sheet ( Hoja de datos )
| Número de pieza | IGC136T170S8RH2 | |
| Descripción | IGBT3 Power Chip | |
| Fabricantes | Infineon | |
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IGC136T170S8RH2
IGBT3 Power Chip
Features:
1700V Trench & Field stop technology
low switching losses and saturation losses
soft turn off
positive temperature coefficient
easy paralleling
Qualified according to JEDEC for target
applications
Recommended for:
power modules
Applications:
drives
C
G
E
Chip Type
VCE
ICn1 )
Die Size
Package
IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters
Die size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
17.72 x 7.7
See chip drawing
1.674 x 0.899
136.4
190
200
187
Photoimide
3200 nm AlSiCu
Ni Ag –system
mm2
µm
mm
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7804N, L7804U, L7804F, Edition 1.1, 27.06.2014
1 page  
IGC136T170S8RH2
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7804N, L7804U, L7804F, Edition 1.1, 27.06.2014
5 Page | ||
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