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Teilenummer | 2EDL05N06PJ |
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Beschreibung | 600V half bridge gate drive IC | |
Hersteller | Infineon | |
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Gesamt 22 Seiten EiceDRIVER™ Compact
High voltage gate driver IC
2EDL family
600 V half bridge gate drive IC
2EDL05I06PF
2EDL05I06PJ
2EDL05I06BF
2EDL05N06PF
2EDL05N06PJ
EiceDRIVER™ Compact
Final datasheet
<Revision 2.6>, 01.06.2016
Final
Industrial Power Control
EiceDRIVER™ Compact
2EDL family
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Members of 2EDL family......................................................................................................................7
Pin Description ...................................................................................................................................10
Abs. maximum ratings........................................................................................................................13
Required Operation Conditions..........................................................................................................14
Operating range .................................................................................................................................14
Static parameters ...............................................................................................................................15
Dynamic parameters ..........................................................................................................................17
Data of reference layout .....................................................................................................................20
Data of reference layout .....................................................................................................................21
Final datasheet
6 <Revision 2.6>, 01.06.2016
6 Page EiceDRIVER™ Compact
2EDL family
3.6 Undervoltage lockout (UVLO)
Two different UVLO options are required for IGBT and MOSFET. The types 2EDL05I06Px and 2EDL05I06BF
are designed to drive IGBT. There are higher levels of undervoltage lockout for the low side UVLO than for the
high side. This supports an improved start up of the IC, when bootstrapping is used. The thresholds for the low
side are typically VDDUV+ = 12.5 V (positive going) and VDDUV– = 11.6 V (negative going). The thresholds for the
high side are typically VBSUV+ = 11.6 V (positive going) and VBSUV– = 10.7 V (negative going).
The types 2EDL05N06Px are designed to drive power MOSFET. A similar distinction for the high side and low
side UVLO threshold as for IGBT is not realised here. The IC shuts down all the gate drivers power outputs,
when the supply voltage is below typ. VDDUV- = 8.3 V (min. / max. = 7.5 V / 9 V). The turn-on threshold is typ.
VDDUV+ = 9.1 V (min. / max. = 8.3 V / 9.9 V)
3.7 Bootstrap diode
An ultra fast bootstrap diode is monolithically integrated for establishing the high side supply. The differential
resistor of the diode helps to avoid extremely high inrush currents when charging the bootstrap capacitor
initially.
3.8 Deadtime and interlock function
The IC provides a hardware fixed deadtime. The deadtime is different for the two MOSFET types
(2EDL05N06Px) and for the two IGBT types (2EDL05I06Px). The deadtimes are particularly typ. 380 ns for
IGBT and typ. 75 ns for MOSFET. An additional interlock function prevents the two outputs from being activated
simultaneously.
The part 2EDL05I06BF does not have the deadtime feature and also not the interlock function. Here, the two
outpus can be activated simultaneously.
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1 Not subject of production test, verified by characterisation
Final datasheet
12
<Revision 2.6>, 01.06.2016
12 Page | ||
Seiten | Gesamt 22 Seiten | |
PDF Download | [ 2EDL05N06PJ Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2EDL05N06PF | 600V half bridge gate drive IC | Infineon |
2EDL05N06PJ | 600V half bridge gate drive IC | Infineon |
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