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Número de pieza | IRG7PG35U-EPbF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
C
G
E
n-channel
C
VCES = 1000V
IC = 35A, TC = 100°C
TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
C
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
GCE
IRG7PG35UPbF
TO-247AC
GC E
IRG7PG35U-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG35UPbF
IRG7PG35U-EPbF
TO-247AC
TO-247AD
Tube
Tube
25 IRG7PG35UPbF
25 IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1000
V
55
35
60
A
80
±30 V
210 W
105
-55 to +175
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
1 www.irf.com © 2014 International Rectifier
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.70
–––
40
Units
°C/W
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April 14, 2014
1 page 80
70
60
50
40
TJ = 175°C
30
20
TJ = 25°C
10
0
4 5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
1000
tdOFF
100 tF
tdON
10
tR
1
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
10000
1000
tdOFF
IRG7PG35UPbF/IRG7PG35U-EPbF
4000
3000
2000
1000
EON
EOFF
0
0 10 20 30 40
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
3500
3000
2500
EON
2000
1500
EOFF
1000
500
0
20 40 60 80 100
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
10000
1000
Cies
100
tdON
tF
tR
10
0 20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
100
Coes
10
0
Cres
100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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April 14, 2014
5 Page IRG7PG35UPbF/IRG7PG35U-EPbF
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRG7PG35U-EPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG7PG35U-EPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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