PDF PTVA047002EV Data sheet ( Hoja de datos )

Número de pieza	PTVA047002EV
Descripción	Thermally-Enhanced High Power RF LDMOS FET
Fabricantes	Infineon
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No Preview Available ! PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (MHz) Features • Input matched • Integrated ESD protection • Low thermal resistance • High gain • Thermally enhanced package • RoHS compliant • Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) RF Characteristics DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz) VDD = 50 V, IDQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Average Output Power Gain Drain Efficiency Adjacent Channel Power Ratio POUT Gps hD ACPR — 16.5 24 — 130 17.5 29 –29.5 — — — –25 W dB % dBc (ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency) All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 04.1, 2015-07-08 1 page PTVA047002EV Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA047002EV V1 Test Fixture Part No. LTN/PTVA047002EV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 470 – 806 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Input C101, C102 Capacitor, 12 pF C103, C104, C105, C106, C107 Capacitor, 10 pF C108, C109 Capacitor, 100 pF C110, C113, C117 Capacitor, 91 pF C111, C112, C115, C116 Capacitor, 16 pF C114, C118 Capacitor, 10 µF R101, R102 Resistor, 10 Ω R103, R104 Resistor, 5.6 Ω R105 Coax, 25 Ω Output C201 Capacitor, 8.2 pF C202 Capacitor, 6.8 pF C203, C205 Capacitor, 4.7 pF C204 Capacitor, 4.1 pF C206 Capacitor, 2 pF C207 Capacitor, 8.2 pF C208, C210 Capacitor, 100 pF C209, C211, C215 Capacitor, 91 pF C212, C213, C216, C217 Capacitor, 10 µF C214, C218 Capacitor, 100 µF R201, R202, R203, R204, Resistor, 1 Ω R205, R206, R207,R208 R209 Coax, 25 Ω Manufacturer ATC ATC ATC ATC ATC TDK Corporation Panasonic Electronic Components Panasonic Electronic Components Micro-coax ATC ATC ATC ATC ATC ATC ATC ATC TDK Corporation Cornell Dubilier Electronics (CDE) Panasonic Electronic Components Micro-coax P/N ATC800A120JW150XB ATC100A100JW150XB ATC100A101JW150XB ATC100B910JW500XB ATC100A160JW150XB C5750X5R1H106K230KA ERJ-8GEYJ100V ERJ-8GEYJ5R6V UT-090C-25 ATC100A8R2JW150XB ATC100A6R8JW150XB ATC100A4R7JW150XB ATC100A4R1JW150XB ATC100A2R0JW150XB ATC100A8R2JW150XB ATC100A101JW150XB ATC100B910JW150XB C5750X5R1H106K230KA SK101M100ST ERJ-8GEYJ1R0V UT-090C-25 Data Sheet 5 of 8 Rev. 04.1, 2015-07-08 5 Page

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