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WFW9N70 Schematic ( PDF Datasheet ) - Wisdom technologies

Teilenummer WFW9N70
Beschreibung N-Channel MOSFET
Hersteller Wisdom technologies
Logo Wisdom technologies Logo 




Gesamt 2 Seiten
WFW9N70 Datasheet, Funktion
Wisdom Semiconductor
WFW9N70
N-Channel MOSFET
Features
RDS(on) (Max 1.2 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
TO-247
{ 2. Drain
◀▲
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
700
9.0
5.4
36
±30
654
17.8
4.5
178
1.42
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.7
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.





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