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WFW11N90 Schematic ( PDF Datasheet ) - Wisdom technologies

Teilenummer WFW11N90
Beschreibung N-Channel MOSFET
Hersteller Wisdom technologies
Logo Wisdom technologies Logo 




Gesamt 7 Seiten
WFW11N90 Datasheet, Funktion
Wisdom Semiconductor
WFW11N90
Features
RDS(on) (Max 1.1 )@VGS=10V
Gate Charge (Typical 70nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
N-Channel MOSFET
Symbol
1. Gate{
TO-247
{ 2. Drain
◀▲
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
900
11
6.6
44
±30
1280
30
4.0
300
2.38
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.42
-
40
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/2






WFW11N90 Datasheet, Funktion
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
D riv e r
RG
V GS
+
V DS
_
L
Sam e Type
as DUT
• d v /d t c o n tro lle d b y R G
• IS D c o n tro lle d b y p u ls e p e rio d
V DD
V GS
( D riv e r )
I SD
(DUT )
V DS
(DUT )
D
=
- -G- - a- -t-e- - -P- -u-l-s- e- - -W- - -i-d- t-h- -
G a te P u ls e P e rio d
10V
IFM , B o d y D io d e F o rw a rd C u rre n t
d i/d t
IR M
B o d y D io d e R e v e rs e C u rre n t
B o d y D io d e R e c o v e ry d v /d t
V SD
B o d y D io d e
F o rw a rd V o lta g e D ro p
V DD

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