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NXPSC10650 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer NXPSC10650
Beschreibung Silicon Carbide Diode
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 9 Seiten
NXPSC10650 Datasheet, Funktion
NXPSC10650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
Highly stable switching performance
High forward surge capability IFSM
Extremely fast reverse recovery time
Superior in efficiency to Silicon Diode alternatives
Reduced losses in associated MOSFET
Reduced EMI
Reduced cooling requirements
RoHS compliant
3. Applications
Power factor correction
Telecom/Server SMPS
UPS
PV inverter
PC Silverbox
LED/OLED TV
Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 112 °C; square-wave
pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit
- - 650 V
- - 10 A
- - 175 °C
- 1.5 1.7 V
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NXPSC10650 Datasheet, Funktion
NXP Semiconductors
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
NXPSC10650
Silicon Carbide Diode
SOD59A
q
D1
D
E
P
b1
Lb
A
A1
H
Q
E1
V
eC
Dimensions: (mm are the original dimensions)
0 5 10 mm
scale
Unit A A1 b b1(1) c D D1 E e H L P Q q E1 V
max
mm nom
min
4.7
4.3
1.40 0.95 1.70 0.65 15.8
1.15 0.70 1.17 0.45 15.6
6.8 10.30 5.08 16.25 15.0 3.80
6.4 9.65 (REF) 15.70 12.5 3.53
2.6
2.2
2.95
2.65
8.1 6.9
7.9 (REF)
Note
1. Protruded dambar are included in the dimension.
Outline
version
References
IEC
JEDEC
JEITA
European
projection
SOD59A
TO-220AC (2-lead)
Fig. 6. Package outline TO-220AC (SOD59A)
sod059a_po
Issue date
15-03-24
15-03-30
NXPSC10650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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