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Teilenummer | NXPS20H100CX |
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Beschreibung | Dual power Schottky diode | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 11 Seiten NXPS20H100CX
Dual power Schottky diode
Rev. 2 — 24 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT186A (TO-220F) "full pack" plastic package.
1.2 Features and benefits
High junction temperature capability
Isolated package
Low leakage current
Negligible switching losses
Optimised design to give low VF and
high Tj(max)
1.3 Applications
DC to DC converters
Freewheeling diode
OR-ing diode
Switched mode power supply rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
IF(AV)
repetitive peak reverse voltage
average forward current
square-wave pulse; δ = 0.5 ;
Th ≤ 147 °C; per diode; see Figure 1;
see Figure 2; see Figure 3
IO(AV)
average output current
square-wave pulse; δ = 0.5 ;
Th ≤ 128 °C; both diodes conducting
Tj junction temperature
Static characteristics
VF forward voltage
IF = 10 A; Tj = 25 °C; see Figure 6
IF = 10 A; Tj = 125 °C; see Figure 6
IR reverse current
VR = 100 V; Tj = 25 °C; see Figure 7
VR = 100 V; Tj = 125 °C; see Figure 7
Min Typ Max Unit
- - 100 V
- - 10 A
- - 20 A
- - 175 °C
- - 0.77 V
- 0.59 0.64 V
- 2 4.5 µA
- 1 6 mA
NXP Semiconductors
1000
C
(pF)
NXPS20H100CX
Dual power Schottky diode
003aaj349
100
1
10 VR (V) 100
Fig 8. Junction capacitance as a function of applied reverse voltage; per diode; typical values
NXPS20H100CX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 May 2012
© NXP B.V. 2012. All rights reserved.
6 of 11
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ NXPS20H100CX Schematic.PDF ] |
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