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HSMS-286P Schematic ( PDF Datasheet ) - AVAGO

Teilenummer HSMS-286P
Beschreibung Surface Mount Microwave Schottky Detector Diodes
Hersteller AVAGO
Logo AVAGO Logo 




Gesamt 18 Seiten
HSMS-286P Datasheet, Funktion
HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS‑286x family of DC biased detector diodes
have been designed and optim­ized for use from 915 MHz
to 5.8 GHz.They are ideal for RF/ID and RFTag applications
as well as large signal detection, modulation, RF to DC
conversion or voltage doubling.
Available in various package ­conf­igurations, this family
of detector diodes provides low cost solutions to a wide
variety of design problems. Avago’s manufacturing
techniques assure that when two or more diodes are
mounted into a single surface mount package, they
are taken from adjacent sites on the wafer, assuring the
highest possible degree of match.
Pin Connections and Package Marking
16
25
34
Notes:
1. Package marking provides orientation and identification.
2. The first two characters are the package marking code.
The third character is the date code.
SOT-23/SOT-143 Package Lead Code Identification
(top view)
SINGLE
3
SERIES
3
12
#0
COMMON
ANODE
3
12
#2
COMMON
CATHODE
3
1 #3 2
1 #4 2
UNCONNECTED
PAIR
34
Features
Surface Mount SOT-23/SOT‑143 Packages
Miniature SOT-323 and SOT‑363 Packages
High Detection Sensitivity:
  up to 50 mV/µW at 915 MHz
  up to 35 mV/µW at 2.45 GHz
  up to 25 mV/µW at 5.80 GHz
Low FIT (Failure in Time) Rate*
Tape and Reel Options Available
Unique Configurations in Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
HSMS-286K Grounded Center Leads Provide up to
10 dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power
Dissipation
Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
SOT-323 Package Lead Code Identification (top view)
SINGLE
3
SERIES
3
1 B2
COMMON
ANODE
3
1 C2
COMMON
CATHODE
3
1E2
1 F2
SOT-363 Package Lead Code Identification (top view)
HIGH ISOLATION UNCONNECTED
UNCONNECTED PAIR
TRIO
654
654
1 #5 2
123
K
BRIDGE
QUAD
654
1 2L 3
RING
QUAD
654
1 2P 3
1 2R 3






HSMS-286P Datasheet, Funktion
Appli­cations Information
Introduction
Avago’s HSMS‑286x family of Schottky detector diodes
has been developed specifically for low cost, high
volume designs in two kinds of applications. In small
signal detector applications (Pin < -20 dBm), this diode is
used with DC bias at frequencies above 1.5 GHz. At lower
frequencies, the zero bias HSMS-285x family should be
considered.
In large signal power or gain control applications
(Pin> ‑20 dBm), this family is used without bias at
frequencies above 4 GHz. At lower frequencies, the
HSMS-282x family is preferred.
Schottky Barrier Diode Characteristics
Stripped of its package, a Schottky barrier diode chip
consists of a metal-semiconductor barrier formed by
deposition of a metal layer on a semiconductor. The most
common of several different types, the passivated diode,
is shown in Figure 7, along with its equivalent circuit.
METAL
RS
PASSIVATION
PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
SCHOTTKY JUNCTION
N-TYPE OR P-TYPE SILICON SUBSTRATE
Cj
Rj
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Figure 7. Schottky Diode Chip.
RS is the parasitic series resistance of the diode, the sum
of the bondwire and lHeSaMdSf-2r8a5mA/6eArfeigs9istance, the resistance
of the bulk layer of silicon, etc. RF energy coupled into
RS is lost as heat — it does not contribute to the rectified
output of the diode. CJ is parasitic junction capaci­tance
of the diode, controlled by the thickness of the epitaxial
layer and the diameter of the Schottky contact. Rj is the
junction resistance of the diode, a function of the total
current flowing through it.
Rj
=
8.33 X 10 -5 n T
IS+Ib
=
RV
-
R
s
= 0.026 at 25°C
IS +I b
where
n = ideality factor (see table of SPICE parameters)
( )ITISb====ItseSeax(mtetuexprrpaentraiaoltlnyuV0race-.pu0IiRrp2nrl6eiS°enKdt
-(1se) e
bias
table of
current
SPICE parameters)
in amps
IS is a function of diode barrier height, and can range
from picoamps for high barrier diodes to as much as 5
µA for very low barrier diodes.
Rj
=
8.33 X 10 -5 n T
IS+Ib
=
RV
-
R
s
The=He0ig.0h2t6of tahte25S°cChottky Barrier
The cuIrSre+nItb-voltage character­istic of a Schottky barrier
diode at room temperature is described by the following
equation:
( )I = I S (exp
V - IR S - 1)
0.026
On a semi-log plot (as shown in the Avago catalog) the
current graph will be a straight line with inverse slope
2.3 X 0.026 = 0.060 volts per cycle (until the effect of RS is
seen in a curve that droops at high current). All Schottky
diode curves have the same slope, but not necessar‑
ily the same value of current for a given voltage. This is
deter­mined by the saturation current, IS, and is related to
the barrier height of the diode.
Through the choice of p-type or n‑type silicon, and the
selection of metal, one can tailor the characteristics of a
Schottky diode. Barrier height will be altered, and at the
same time CJ and RS will be changed. In general, very
low barrier height diodes (with high values of IS, suitable
for zero bias applica­tions) are realized on p-type silicon.
Such diodes suffer from higher values of RS than do
the n‑type. Thus, p-type diodes are generally reserved
for small signal detector applications (where very high
values of RV swamp out high RS) and n-type diodes are
used for mixer applications (where high L.O. drive levels
keep RV low) and DC biased detectors.
Measuring Diode Linear Parameters
The measurement of the many elements which make
up the equivalent circuit for a pack­aged Schottky diode
is a complex task. Various techniques are used for each
element. The task begins with the elements of the diode
chip itself. (See Figure 8).
RV
RS
Cj
Figure 8. Equivalent Circuit of a Schottky Diode Chip.
RS is perhaps the easiest to measure accurately. The V-I
curve is measured for the diode under forward bias, and
the slope of the curve is taken at some relatively high
value of current (such as 5 mA). This slope is converted
into a resistance Rd.
RS =Rd -
0.026
If
Fcuorrrne-ntty,pCejdiisoRdoVeb=staRwinjit+ehdRrebSlaytimveelaysluorwinvgaltuhees
of saturation
total capaci‑
tance (see AN1124). Rj, the junction resistance, is calcu‑
lated using the equation given above.
6

6 Page









HSMS-286P pdf, datenblatt
The line marked “RF diode, Vout” is the transfer curve for
the detector diode — both the HSMS‑2825 and the HSMS-
282K exhibited the same output voltage. The data were
taken over the 50 dB dynamic range shown. To the right
is the output voltage (transfer) curve for the reference
diode of the HSMS-2825, showing 37 dB of isolation. To
the right of that is the output voltage due to RF leakage
for the reference diode of the HSMS-282K, demonstrating
10 dB higher isolation than the conventional part.
Such differential detector circuits generally use single
diode ­detectors, either series or shunt mounted diodes.
The voltage doubler offers the advantage of twice
the output voltage for a given input power. The two
concepts can be combined into the differential voltage
doubler, as shown in Figure 32.
bias
matching
network
differential
amplifier
PRF = RF power dissipated
NoTtje=th(Vatf θI fjc+, tPheRFt)hθejrcm+aTl raesistance fErqoumatiodnio(1d)e. junction
to the foot of the leads, is the sum of two component
resistances,
θjc = θpkg + θchip
Equation (2).
Package thermal resistance for the SOT-323 and SOT-363
preascisktaagneceis1f1ao6pr0pt0rho(exVsimef -athItefreRlyes1)f0a0m°Cili/eWs,
and the chip thermal
oEfqduiaotidoens(3i)s. approxi‑
mtIhf Tae=trjemI=lSya(Vle4­r0ef I°sfCis+/tWaPn.RcFTne)hTfθerojcdm+esdTigiaond-ee1r cwasilel
have to add
tEoqauamtibonie(n1)t.
in the
a poor
choice of circuit board material or heat sink design can
make this number very high.
( ) ( )EfteIoeqsqθTmr=uujjtcaaphI=tt=0eeiioo(rVθafnnapt2fukc3T9Ig(rt,1f8e+f+t)oharθ2nPwasVctRheofFwidpui-)seil4:θodl0ldjc6aeb0+sefoTfor1saTwrtwraa-arigdr21dh9vt8cofoultrraEEEwrqqqgeauuuneraaatdttti.iiisoooTnnntaho(((e214fu)))s...enoqclvuteiaotnibouontf,
11600 (V f - I f R s)
I
f
θ=jcI
=
S
θepkg
+
θchinpT
-1
Equation (3).
Equation (2).
Figure 32. Differential Voltage Doubler, HSMS-286P.
Here, all four diodes of the HSMS‑286P are matched in
their Vf characteristics, because they came from adjacent
sites on the wafer. A similar circuit can be realized using
the HSMS-286R ring quad.
Other configurations of six lead Schottky products can
be used to solve circuit design problems while saving
space and cost.
Thermal Considerations
The obvious advantage of the SOT-363 over the SOT-
143 is combination of smaller size and two extra leads.
However, the copper leadframe in the SOT-323 and SOT-
363 has a thermal conductivity four times higher than
the Alloy 42 leadframe of the SOT-23 and SOT-143, which
enables it to dissipate more power.
The maximum junction temperature for these three
families of Schottky diodes is 150°C under all operating
conditions. The following equation, equation 1, applies
to the thermal analysis of diodes:
T j = (V f I f + P RF ) θ jc + T a
Equation (1).
where
θTTjcaj
==
=
jθdupinokcgdt+eiocθnacstheeipmtepmerpaetruarteure
θjc = thermal resistance
Vf If = DC power dissipated
12 11600 (V f - I f R s)
If = I S e nT - 1
Equation (2).
Equation (3).
where
( ) ( )Isf =nTRsI==S0=tiddeemei2o1Ta9pd1l8iee6tyr0sa2n0fetarue(cinVer-teoTsf4rir-0ne6I0fiKsRtas1T)nc--e12198
Equation (3).
Equation (4).
and IS (diode saturation current) is given by
( ) ( )Is = I 0
T
298
2
n
- 4060
e
1
T
-
1
298
Equation (4).
Equations (1) and (3) are solved simultaneously to obtain
the value of junction temperature for given values of
diode case temperature, DC power dissipation and RF
power dissipation.

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