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ATF-55143 Schematic ( PDF Datasheet ) - AVAGO

Teilenummer ATF-55143
Beschreibung Low Noise Enhancement Mode Pseudomorphic HEMT
Hersteller AVAGO
Logo AVAGO Logo 




Gesamt 20 Seiten
ATF-55143 Datasheet, Funktion
ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-55143 is a high dynamic range,
very low noise, single supply E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS hand-
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“5F” = Device Code
“x” = Date code character identifies month of manufacture.
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise figure
Excellent uniformity in product specifications
400 micron gate width
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead Free Option Available
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise figure
17.7 dB associated gain
Lead-free option available
Applications
Low noise amplifier for cellular/PCS handsets
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-PHEMT for other ultra low
noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.






ATF-55143 Datasheet, Funktion
ATF-55143 Typical Performance Curves, continued
28
25°C
-40°C
85°C
23
2.0
1.5
25°C
-40°C
85°C
18 1.0
13 0.5
8
012 3 45
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
6
16
14
12
10
8
6
4
2
0 25°C
-40°C
-2 85°C
-4
-6
012 3 456
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
0
012 3 45
FREQUENCY (GHz)
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
6
16
15
14
13
12
25°C
-40°C
11 85°C
10
012 3 456
FREQUENCY (GHz)
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1,2]
25
24
23
22
21
25°C
-40°C
20 85°C
19
012 3 45
FREQUENCY (GHz)
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
6
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS dsq d
as a P1dB of +14.5 dBm is approached.
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ATF-55143 pdf, datenblatt
ATF-55143 Typical Scattering Parameters, V = 3V, I = 20 mA
DS DS
Freq. S
GHz Mag. 11 Ang.
S
dB M2a1g. Ang.
0.1 0.998 -7.4
0.5 0.947 -35.9
0.9 0.859 -60.9
1.0 0.839 -66.7
1.5 0.738 -91.8
1.9 0.671 -108.7
2.0 0.657 -112.7
2.5 0.595 -131.7
3.0 0.552 -149.8
4.0 0.513 175.4
5.0 0.521 143.8
6.0 0.536 118.3
7.0 0.557 96.5
8.0 0.577 75.3
9.0 0.613 56.2
10.0 0.687 38
11.0 0.746 22
12.0 0.787 8.1
13.0 0.816 -7
14.0 0.842 -22.6
15.0 0.869 -37
16.0 0.863 -50.2
17.0 0.879 -59.6
18.0 0.924 -69.8
23.34
22.77
21.71
21.41
19.86
18.71
18.44
17.19
16.07
14.2
12.58
11.1
9.83
8.67
7.71
6.81
5.67
4.59
3.62
2.67
1.3
-0.29
-1.7
-2.87
14.697
13.762
12.178
11.764
9.844
8.621
8.354
7.233
6.36
5.13
4.256
3.588
3.1
2.715
2.43
2.192
1.922
1.697
1.516
1.36
1.161
0.967
0.822
0.719
174.2
151.9
132.9
128.7
110.5
98.5
95.7
82.7
70.9
49.1
28.7
9.7
-8.2
-25.8
-43.1
-61.8
-80.2
-97.2
-114.9
-133.6
-152.3
-169.6
175.6
159.7
S
Mag. 12
0.005
0.023
0.037
0.039
0.050
0.055
0.057
0.062
0.067
0.075
0.081
0.087
0.092
0.095
0.105
0.116
0.121
0.126
0.128
0.131
0.126
0.1200
0.118
0.113
Ang.
85.1
69.2
56.2
53.5
42.5
36.2
34.8
28.7
23.5
14.2
4.9
-3.5
-12.9
-22.1
-28.7
-41.7
-54
-66.1
-79.1
-93
-107.2
-120.2
-131.9
-145.9
S
Mag. 22
0.763
0.721
0.661
0.642
0.570
0.524
0.514
0.468
0.423
0.345
0.287
0.254
0.224
0.187
0.140
0.075
0.084
0.145
0.191
0.256
0.369
0.471
0.548
0.608
Ang.
-4.3
-20.6
-33.8
-36.3
-46.7
-52.5
-53.7
-59.1
-63.8
-74.3
-87.7
-101.6
-116.1
-124.3
-133.5
-178.8
94
54.4
30
8
-10.9
-23.5
-37.3
-52.2
MSG/MAG
dB
34.68
27.77
25.17
24.79
22.94
21.95
21.66
20.67
19.77
18.35
16.82
14.32
12.80
11.44
10.68
10.67
10.24
9.82
9.35
9.01
8.04
6.10
5.47
7.40
Typical Noise Parameters, V = 3V, I = 20 mA
DS DS
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5 0.18 0.63 17.6 0.1
0.9 0.24 0.54 23.4 0.1
1.0 0.25 0.53 27.9 0.1
1.9 0.39 0.48 48.4 0.09
2.0 0.4 0.47 51.6 0.09
2.4 0.47 0.39 61.9 0.08
3.0 0.56 0.32 78.7 0.07
3.9 0.68 0.19 119.8 0.06
5.0 0.85 0.19 -170.4 0.06
5.8 0.97 0.22 -135.1 0.08
6.0 1.01 0.22 -128.4 0.09
7.0 1.14 0.28 -94.7 0.14
8.0 1.31 0.35 -66.8 0.25
9.0 1.47 0.44 -45.6 0.38
10.0 1.59 0.54 -28.9 0.57
Ga
dB
25.89
23.98
23.53
20
19.66
18.4
16.77
14.85
13.21
12.37
12.2
11.47
10.84
10.15
9.22
40
35
30
MSG
25
20
15 |S21|2
10
MAG
5
0
-5
0 5 10 15
FREQUENCY (GHz)
Figure 31. MSG/MAG and |S21|2 vs.
Frequency at 3V, 20 mA.
20
Notes:
1. F values at 2 GHz and higher are based on measurements while the F below 2 GHz have been extrapolated. The F values are based on
min
mins
min
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
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