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ATF-531P8 Schematic ( PDF Datasheet ) - AVAGO

Teilenummer ATF-531P8
Beschreibung High Linearity Enhancement Mode Pseudomorphic HEMT
Hersteller AVAGO
Logo AVAGO Logo 




Gesamt 15 Seiten
ATF-531P8 Datasheet, Funktion
ATF-531P8
High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] ­Package
Data Sheet
Description
Avago Technologies’ ­­ATF‑531P8 is a single-voltage high
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
3Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Top View
Pin 5
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
Single voltage operation
High linearity and gain
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
38 dBm output IP3
0.6 dB noise figure
20 dB gain
10.7 dB LFOM[4]
24.5 dBm output power at 1 dB gain compression
Applications
Front-end LNA Q1 and Q2 driver or pre-driver ampli‑
fier for Cellular/PCS and WCDMA wireless infrastruc‑
ture
Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
plications
General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.






ATF-531P8 Datasheet, Funktion
ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
60
50
40
30
20
10
3V
4V
5V
0
75 90 105 120 135 150 165 180
Idq (mA)
Figure 17. PAE vs. Idq and Vds at 900 MHz.
60
50
40
30
20
10
3V
4V
5V
0
75 90 105 120 135 150 165 180
Idq (mA)
Figure 18. PAE vs. Idq and Vds at 2 GHz.
60
50
40
30
20
3V
10 4V
5V
0
75 90 105 120 135 150 165 180
Idq (mA)
Figure 19. PAE vs. Idq and Vds at 3.9 GHz.
45
40
35
30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz.
12
10
8
6
4
3V
2 4V
5V
0
75 90 105 120 135 150 165 180
Ids (mA)
Figure 21. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
30
25
20
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 22. P1dB vs. Idq and Vds at 5.8 GHz.
60
50
40
30
20
3V
10 4V
5V
0
75 90 105 120 135 150 165 180
Idq (mA)
Figure 23. PAE vs. Idq and Vds at 5.8 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.


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ATF-531P8 pdf, datenblatt
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS= 135 mA
Freq.   
GHz Mag.
S11 Ang. dB
MSa21g . Ang.
dB
MS1a2 g. Ang.
0.1 0.823 -57.1
33.96 49.888 151.3 -37.72 0.013 62.6
0.2 0.826 -95.6
31.82 38.989 131.6 -33.98 0.020 45.7
0.3 0.842 -118.2 29.66 30.415 119.6 -32.77 0.023 36.0
0.4 0.846 -133.1 27.75 24.416 111.4 -32.04 0.025 30.1
0.5 0.851 -142.0 26.21 20.452 105.9 -31.70 0.026 26.8
0.6 0.850 -149.2 24.83 17.443 101.4 -31.37 0.027 24.4
0.7 0.855 -154.9 23.62 15.178 97.7 -31.37 0.027 22.9
0.8 0.856 -159.5 22.55 13.405 94.7 -31.06 0.028 22.1
0.9 0.859 -163.2 21.59 12.012 92.0 -31.06 0.028 21.4
1
0.857 -166.3
20.71 10.853 89.6 -30.75 0.029 21.1
1.5 0.857 -177.7 17.32 7.342 79.9 -30.46 0.030 21.0
1.9 0.858 175.8
15.31 5.828 73.6 -29.90 0.032 21.6
2
0.855 174.4
15.08 5.676 72.3 -29.37 0.034 22.1
2.4 0.855 168.8
13.51 4.738 66.4 -29.12 0.035 22.6
3
0.854 161.4
11.54 3.774 58.2 -28.40 0.038 22.8
4
0.858 150.7
8.98 2.812 45.3 -27.13 0.044 22.7
5
0.860 140.4
6.92 2.219 32.8 -26.02 0.050 20.7
6
0.868 131.4
5.21 1.821 21.0 -24.88 0.057 17.2
7
0.866 123.2
3.79 1.547 9.4 -23.88 0.064 13.4
8
0.877 114.8
2.52 1.337 -2.0 -22.85 0.072 8.5
9
0.876 106.3
1.57 1.198 -13.7 -21.83 0.081 2.6
10 0.880 95.1
0.56 1.066 -26.0 -21.11 0.088 -5.0
11 0.883 84.7 -0.46 0.948 -38.2 -20.35 0.096 -12.9
12 0.874 73.6 -1.51 0.840 -49.6 -19.83 0.102 -20.7
13 0.878 62.9 -2.56 0.745 -61.1 -19.41 0.107 -28.5
14 0.884 56.9 -3.54 0.665 -71.0 -18.94 0.113 -35.9
15 0.906 46.7 -4.70 0.582 -80.8 -18.71 0.116 -43.9
16 0.907 42.9 -5.61 0.524 -88.0 -18.49 0.119 -51.4
17 0.893 32.2 -6.80 0.457 -99.8 -18.42 0.120 -58.7
18 0.925 20.7 -8.38 0.381 -107.2 -18.86 0.114 -66.3
MagS. 22
Ang.
0.427 -55.1
0.418 -92.8
0.421 -115.9
0.420 -130.7
0.419 -139.0
0.419 -146.4
0.419 -151.9
0.420 -156.1
0.421 -159.7
0.419 -162.6
0.418 -172.9
0.418 -178.2
0.410 -179.1
0.403 176.0
0.409 169.8
0.423 161.0
0.440 152.8
0.457 144.4
0.475 136.6
0.490 128.0
0.502 119.3
0.519 108.7
0.530 98.4
0.566 90.7
0.613 79.7
0.652 69.3
0.670 60.8
0.704 51.6
0.747 43.7
0.717 35.8
MSG/MAG
dB
35.84
32.90
31.21
29.90
28.96
28.10
27.50
26.80
26.32
25.73
23.89
22.60
22.23
21.32
19.97
16.15
13.82
12.31
10.81
10.00
9.09
8.20
7.31
6.06
5.32
4.87
4.76
4.29
2.90
2.20
Typical Noise Parameters, VDS = 3V, IDS= 135 mA
Freq
GHz
FdmBin
ΓMoapgt .
ΓAnopgt . Rn/50
0.5 0.25 0.20 166.00 0.020
0.9 0.30 0.25 169.00 0.022
1 0.30 0.35 171.00 0.018
1.5 0.36 0.40 173.00 0.019
2 0.45 0.46 176.80 0.020
2.4 0.52 0.52 -174.70 0.021
3 0.66 0.56 -169.80 0.025
3.5 0.70 0.62 -162.80 0.028
3.9 0.87 0.65 -157.90 0.042
5 1.02 0.67 -145.70 0.082
5.8 1.13 0.71 -136.80 0.140
6 1.24 0.73 -135.10 0.175
7 1.34 0.82 -126.20 0.380
8 1.58 0.83 -116.90 0.645
9 1.78 0.81 -107.50 0.870
10 1.88 0.83 -95.40 1.350
GdBa
28.47
24.36
24.24
21.17
19.30
18.08
16.26
15.33
14.62
12.52
11.53
11.40
10.57
9.67
8.59
7.76
40
30
MSG
20
MAG
10
S21
0
-10
0 5 10 15
FREQUENCY (GHz)
Figure 32. MSG/MAG & |S21|2 (dB)
@ 3V, 135 mA.
20
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
12

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