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AT-32063 Schematic ( PDF Datasheet ) - AVAGO

Teilenummer AT-32063
Beschreibung High Performance NPN Silicon Bipolar Transistor
Hersteller AVAGO
Logo AVAGO Logo 




Gesamt 8 Seiten
AT-32063 Datasheet, Funktion
AT-32063
Low Current, High Performance NPN Silicon Bipolar Transistor
Data Sheet
Description
The AT-32063 contains two high performance NPN bipolar
transistors in a single SOT-363 package. The devices are
unconnected, allowing flexibility in design. The pin-out
is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount
package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and low
operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated
systems as an LNA, gain stage, buffer, oscillator, or active
mixer. Typical amplifier designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more associated gain at a 2.7
V, 5 mA bias, with noise performance being relatively
insensitive to input match. High gain capability at 1 V, 1
mA makes this device a good fit for 900 MHz pager ap-
plications. Voltage breakdowns are high enough for use
at 5 volts.
The AT-3 series bipolar transistors are fabricated using
aSnelfo-Apltiigmniezded-Trvaenrssiisotnoro(fSAATv)agporo’sce1s0s G. THhzefdt i,e3a0reGnHiztrfidmaex
passivated for surface protection. Excellent device unifor-
mity, performance and reliability are produced by the use
of ion-implantation, self-alignment techniques, and gold
metallization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance: 1.1 dB NF, 14.5 dB GA
Characterized for End-of-Life Battery Use (2.7 V)
SOT-363 (SC-70) Plastic Package
Tape-and-Reel Packaging Option Available
Lead-free
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
1
B1
2
E1
3
C2
6
C1
5
E2
4
B2






AT-32063 Datasheet, Funktion
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.96 -12
0.78 -53
0.59 -84
0.56 -90
0.42 -117
0.36 -131
0.33 -140
0.28 -159
0.24 171
0.25 126
0.31 95
dB
16.50
14.84
12.5
11.92
9.46
8.21
7.55
6.24
4.72
2.88
1.49
S21
Mag
6.69
5.52
4.23
3.94
2.97
2.57
2.38
2.05
1.72
1.39
1.19
S12
Ang dB Mag Ang
169 -38.44 0.012 82
133 -26.20 0.049 60
108 -23.4
0.068
50
104 -23.04 0.070 49
84 -21.71 0.082 46
74 -21.04 0.089 47
68 -20.56 0.094 48
57 -19.54 0.105 50
43 -17.76 0.129 53
21 -14.47 0.189 52
3 -11.32 0.272 45
S22
Mag Ang
0.98 -5
0.88 -19
0.79 -27
0.77 -28
0.72 -33
0.70 -36
0.69 -39
0.69 -43
0.68 -50
0.66 -64
0.63 -83
30
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
Ang.
0.9
0.75
13.7 0.74
47
0.37
1.8 1.26 10.8 0.55 101 0.22
2.4
1.60
9.6 0.45 139 0.13
25
MSG
20
15
MAG
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at VCE = 5 V, IC = 2 mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 20 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.61 -36
0.22 -91
0.13 -115
0.12 -118
0.08 -137
0.06 -148
0.06 -159
0.04 175
0.05 131
0.10 99
0.16 86
dB
30.56
21.75
17.02
16.14
12.80
11.31
10.46
9.02
7.35
5.39
4.05
S21
Mag
33.74
12.23
7.10
6.41
4.36
3.68
3.33
2.83
2.33
1.86
1.6
S12
Ang dB Mag
145 -40.46 0.01
98 -29.90 0.03
83 -25.40 0.05
81 -24.56 0.06
68 -21.23 0.09
62 -19.69 0.10
58 -18.79 0.12
50 -17.21 0.14
39 -15.22 0.17
21 -12.48 0.24
3 -10.27 0.31
Ang
75
72
72
71
69
66
65
61
56
46
34
S22
Mag Ang
0.86 -14
0.6 -19
0.57 -21
0.57 -21
0.57 -26
0.57 -30
0.57 -32
0.57 -37
0.56 -45
0.54 -58
0.50 -75
40
35
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
0.9 1.50 18.6 0.18
1.8 1.78 13.3 0.19
2.4 1.96 11.3 0.24
Ang.
74
147
198
0.20
0.16
0.14
30 MSG
25
20
MAG
15
10
S21
5
MSG
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency at VCE = 5 V, IC = 20 mA.


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