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Teilenummer | IKQ120N60TA |
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Beschreibung | IGBT | |
Hersteller | Infineon | |
Logo | ||
Gesamt 16 Seiten IGBT
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryantiparallelEmitterControlleddiode
IKQ120N60TA
600Vlowlossswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKQ120N60TA
TRENCHSTOPTMseries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=120.0A,
VGE=0.0/15.0V,
RG(on)=3.0Ω,RG(off)=3.0Ω,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 33 - ns
- 43 - ns
- 310 - ns
- 33 - ns
- 4.10 - mJ
- 2.80 - mJ
- 6.90 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=120.0A,
diF/dt=1100A/µs
- 280 - ns
- 3.50 - µC
- 25.0 - A
- -500 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=120.0A,
VGE=0.0/15.0V,
RG(on)=3.0Ω,RG(off)=3.0Ω,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 33 - ns
- 51 - ns
- 355 - ns
- 43 - ns
- 6.70 - mJ
- 4.10 - mJ
- 10.80 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=120.0A,
diF/dt=1000A/µs
- 410 - ns
- 10.80 - µC
- 45.0 - A
- -520 - A/µs
6 Rev.2.2,2014-11-21
6 Page TRENCHSTOPTMseries
IKQ120N60TA
0.1
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
800
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
700
600
500
400
300
200
0.001
1E-6
i: 1 2 3
ri[K/W]: 0.05706519 0.08400837 0.1653593
τi[s]: 6.7E-4
9.4E-3
0.1178987
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 21. Diodetransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
100
0
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 22. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
12
10
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
8
6
4
2
70
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
60
50
40
30
20
10
0
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
0
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
12 Rev.2.2,2014-11-21
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ IKQ120N60TA Schematic.PDF ] |
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