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IKQ100N60T Schematic ( PDF Datasheet ) - Infineon

Teilenummer IKQ100N60T
Beschreibung IGBT
Hersteller Infineon
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Gesamt 16 Seiten
IKQ100N60T Datasheet, Funktion
IGBT
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryanti-parallelEmitterControlleddiode
IKQ100N60T
600Vlowlossswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl






IKQ100N60T Datasheet, Funktion
TRENCHSTOPTMseries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=100.0A,
diF/dt=1000A/µs
IKQ100N60T
- 230 - ns
- 2.80 - µC
- 23.0 - A
- -450 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=100.0A,
VGE=0.0/15.0V,
RG(on)=3.6,RG(off)=3.6,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 31 - ns
- 52 - ns
- 351 - ns
- 42 - ns
- 6.00 - mJ
- 3.70 - mJ
- 9.70 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=100.0A,
diF/dt=1000A/µs
- 328 - ns
- 8.70 - µC
- 48.0 - A
- -847 - A/µs
6 Rev.2.2,2014-11-18

6 Page









IKQ100N60T pdf, datenblatt
TRENCHSTOPTMseries
IKQ100N60T
0.1
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
800
Tj=25°C, IF = 100A
Tj=175°C, IF = 100A
700
600
500
400
300
200
i: 1 2 3 4 5 6
ri[K/W]: 1.0E-7 0.03261068 0.05586954 0.07418826 0.1318895 0.05550196
τi[s]: 1.0E-7 6.5E-5
5.0E-4
5.0E-3
0.0704059 0.2736117
0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 21. Diodetransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
100
0
500 600 700 800 900 1000 1100 1200
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 22. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
10
Tj=25°C, IF = 100A
9 Tj=175°C, IF = 100A
8
60
Tj=25°C, IF = 100A
Tj=175°C, IF = 100A
50
7
40
6
5 30
4
20
3
2
10
1
0
500 600 700 800 900 1000 1100 1200
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
0
500 600 700 800 900 1000 1100 1200
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
12 Rev.2.2,2014-11-18

12 Page





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